GT40T321 2009-12-04 1 toshiba insulated gate bipolar tr ansistor silicon n channel igbt GT40T321 consumer application voltage resonance inverter switching application sixth generation igbt ? frd included between emitter and collector ? enhancement mode type ? high speed igbt: t f = 0.24 s (typ.) (i c = 40 a) frd: t rr = 0.7 s (typ.) (di/dt = ? 20 a/ s) ? low saturation voltage v ce (sat) = 2.15 v (typ.) (i c = 40 a) ? high junction temperature t j = 175c (max) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 1500 v gate-emitter voltage v ges ?25 v dc i c 40 collector current 1ms i cp 80 a dc i f 30 diode forward current 1ms i fp 80 a collector power dissipation (tc = 25c) p c 230 w junction temperature t j 175 c storage temperature t stg -55 to 175 c note 1: ensure that the channel temperature does not exceed 175c during use of the device. note 2: using continuously under heavy loads (e.g. t he application of high temperat ure/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e . operating temperature/current/volta ge, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derati ng concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). in general, loss of igbt increases more when it has positive temperature coefficient and gets higher temperature. in case that the te mperature rise due to loss of igbt ex ceeds the heat release capacity of a device, it leads to thermorunaway and results in destructi on. therefore, please design heat release of a device with due consideration to the temperature rise of igbt. unit: mm jedec ? jeita ? toshiba 2-16c1c weight: 4.6 g (typ.)
GT40T321 2009-12-04 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 ? ? 100 na collector cut-off current i ces v ce = 1500 v, v ge = 0 ? ? 1 ma gate-emitter cut-off voltage v ge (off) i c =40 ma, v ce = 5 v 4.0 ? 7.0 v i c = 5 a, v ge = 15 v ? 1.25 1.90 collector-emitter saturation voltage v ce (sat) i c = 40 a, v ge = 15 v ? 2.15 2.50 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz ? 2400 ? pf rise time t r ? 0.15 ? turn-on time t on ? 0.24 ? fall time t f ? 0.24 0.40 switching time turn-off time t off see note 3 circuit diagram. v cc = 600 v, i c = 40a v gg = 15 v, r g = 51 ? 0.54 ? s diode forward voltage v f i f = 30 a, v ge = 0 ? 1.7 2.3 v reverse recovery time t rr i f = 30 a, v ge = 0, di/dt = ? 20 a/ s ? 0.7 ? s thermal resistance (igbt) rth(j-c) ? ? ? 0.65 c/w thermal resistance (diode) rth(j-c) ? ? ? 1.25 c/w note 3: switching time measurement circuit and input/output waveforms marking equivalent circuit note 4: a line under a lot no. identifie s the indication of product labels. [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous subs tances in electrical and electronic equipment. lot no. note 4 40t321 toshiba part no. (or abbreviation code) emitte r collecto r gate 10% 90% v ge v ce i c t off t r t on 0 0 t f 10% 10% 90% 90% r g v cc 10 0 15
GT40T321 2009-12-04 3 collector-emitter voltage v ce (v) collector current i c (a) common emitter tc = ? 40c collector-emitter voltage v ce (v) collector current i c (a) common emitter tc = 150c collector-emitter voltage v ce (v) collector current i c (a) common emitter tc = 25c collector-emitter saturation voltage v ce (sat) (v) case temperature tc (c) common emitter v ge = 15 v collector current i c (a) gate-emitter voltage v ge (v) common emitter v ce = 5 v collector current i c (a) collector -emitter voltage v ce (v) common emitter v ge = 15 v tc = 150c ? 40 0 2 25 4 6 8 10 20 40 60 80 20 5 0 ? 75 ? 25 25 75 125 175 1 2 3 40 60 80 i c = 10 a 0 0 8 v ge = 7 v 1 2 3 4 5 20 40 60 80 20 15 10 8.5 9 7.5 0 0 1 2 3 4 5 20 40 60 80 8 v ge = 7 v 20 15 10 8.5 9 10 0 0 8 1 2 3 4 5 20 40 60 80 20 15 9 7.5 v ge = 7 v 0 0 25 1 2 3 4 20 40 60 80 tc=-40 150 5 7.5 i c ? v ge v ce (sat) ? tc i c ? v ce i c ? v ce i c ? v ce i c ? v ce 4
GT40T321 2009-12-04 4 switching time ( s) gate resistance r g ( ) switching time ? r g common emitter v cc = 600 v i c = 40 a v gg = 15 v tc = 25c switching time ( s) collector current i c (a) switching time ? i c common emitter v cc = 600 v r g = 51 v gg = 15 v tc = 25c collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) gate charge q g (nc) common emitter r l = 3.75 tc = 25c tc = 25c pulse width t w (s) transient thermal impedance(junction ? case) r th(j? c) (c/w) collector-emitter voltage v ce (v) capacitance c (pf) common emitter v ge = 0 f = 1mhz tc = 25 c dc operation collector current i c (a) collector-emitter voltage v ce (v) safe operating area v ce, v ge ? q g v ce = 300 v 400 0 0 50 100 150 200 100 200 300 100 200 0 5 10 15 20 10 0.01 0 20 50 0.1 0.3 1 0.03 0.05 0.5 3 t r t f 10 30 40 5 t on t off r th (j-c) ? t w 10 ? 2 10 ? 5 10 ? 3 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 1 10 10 ? 4 10 ? 3 5 0.01 1 10 100 1000 0.1 0.3 1 t off 0.03 0.05 0.5 3 t on t r t f 10 c ? v ce 10 0.1 1 10 100 1000 100 1000 10000 c res 300 500 30 50 3000 5000 c oes c ies 1 3 5 1 1 10 1000 10 30 100 3 5 50 300 100 500 10 s* 1000 100 s* 10 ms * 1 ms * 10000 0.1 0.3 0.5 v ce max * : single non-repetitive pulse tc = 25c curves must be derated linearly with increases in temperature. i c max (continuous) i c max (pulsed) * 10 ms * diode stage igbt stage
GT40T321 2009-12-04 5 trr irr i f ? v f 100 80 60 40 20 0 0 1 2 3 4 5 tc = 40c 25 125 i rr , t rr ? di/dt 50 40 30 20 10 20 40 60 80 120 i r r t r r 1 0.8 0.6 0.4 0.2 0 100 0 0 i rr , t rr ? i f 20 16 12 8 0 20 40 60 80 100 2.5 2 1.5 1 0.5 0 4 0 peak reverse recovery current i rr (a) reverse recovery time t rr ( s) forward current i f (a) common emitter di/dt = ? 20 a/ s tc = 25c forward voltage v f (v) forward current i f (a) common emitte r v ge = 0 reverse recovery time t rr ( s) di/dt (a/ s) peak reverse recovery current i rr (a) common emitter i f = 30 a tc = 25c
GT40T321 2009-12-04 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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